from NanoMEGAS
The Challenge:
Identify unknown phase of MnGaAs precipitates among 4 different crystal phases and establish orientation relation between GaAs matrix and precipitation
The Solution:
ASTAR technique couple with precession electron diffraction
Magnetic semiconductor materials have attracted widespread attention in recent years due to their potential applications for the transport of information by exploiting both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge. The new technology which emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in sold-state devices was called Spintronics (“Spin Transport Electronics”) also known as magnetoelectronics. READ MORE IN THE ARTICLE BELOW.
ADVANCED IMAGING AND DIFFRACTION TOOLS FOR TRANSMISSION ELECTRON MICROSCOPY
Faster chip performances in ever shrinking electronic devices push circuits down to nanometer size. Spintronic devices and optical properties of organic semiconductors depend on their nm level local structure . Orientation and phase mapping with ASTAR sheds light to local texture and phases, while 3D electron diffraction tomography reveals detailed crystal structure of possible impurities. As metrology tool detailed strain maps down to nm scale allow to monitor precisely electrical properties and avoid device failure.
Intrigued?
To talk about your application, get in touch with our Technical Director, Dr. Shayz Ikram by email below or call (01372) 378822.
