Nanomegas A-Star TEM Orientation Imaging

Nanoscale TEM Orientation Imaging Analysis

ASTAR can turn any TEM into a very powerful analytical tool enabling orientation – phase imaging at 1 nm resolution attainable (FEG TEM) in combination with other TEM analytical techniques. In combination with TOPSPIN simultaneous orientation/phase/strain /STEM maps are possible.

All these techniques are based on Precession Electron Diffraction acquired data in TEM and are high‐end techniques that can be applied for various materials of high scientific and/or industrial interest. These state‐of‐the‐art approaches can be applied in any TEM, providing results within spatial resolutions up to 1‐3nm (ASTAR, TopSPIN) when an FEG nanobeam is used. Such resolution makes these applications unique, and able to shed light on local properties of materials like thin films, metals, batteries, ceramics, semiconductors.

FEATURES

  • Compatible with any TEM 120-200-300 Kv (LaB6 /W- FEG)
  • ASTAR orientation-phase map 1 nm resolution with TEM-FEG
  • ASTAR works with any type of diffracting material (inorganic/organic) using standard TEM specimen preparation techniques
  • ASTAR can work/ retrofit between multiple TEMs in same lab
  • Galvanic Isolation system (GIS) via optical fibre for ASTAR -TEM connection

Dr Shayz Ikram

Technical Director
tel:+44 (0)1372 378822
shayz@qd-uki.co.uk

OPTIONS

APPLICATIONS

Materials Science
Texture of metals is linked to specific physical properties so the need to characterise it at nm scale with novel ASTAR orientation imaging technique.

Semiconductors
Faster chip performances in electronic devices push copper interconnects at < 3  nm  scale, so the need for novel TEM  based  texture ASTAR characterisation technique.  Plasticity mechanism studies of freestanding Pd-films with nanoscale twins.

Nanoparticles
Nanoparticle crystal structure and texture are very important for drug delivery and catalysis properties and need novel TEM characterisation techniques.

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterns in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM).

FEATURES

  • High spatial resolution, high precision strain mapping in modern semiconductor devices
  • Acquisition of STEM reference image
  • Ultra-fast nanobeam precession electron diffraction scanned acquisition
  • Typical acquisition time: 5-10 min (150×150)
  • Time per pixel: 10-40 ms Analysis time 5-10 min
  • Automated local strain analysis via AppFive proprietary algorithm
  • Acquisition from individual positions, line profiles, areas
  • Spatial resolution < 2 nm attainable (FEG TEM)
  • Monitor engineered strain distributions in modern semiconductor devices
  • Expected sensitivity: < 2 x 10-4
  • Intuitive workflow

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible.

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterns in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM).

FEATURES

  • High spatial resolution, high precision strain mapping in modern semiconductor devices
  • Acquisition of STEM reference image
  • Ultra-fast nanobeam precession electron diffraction scanned acquisition
  • Typical acquisition time: 5-10 min (150×150)
  • Time per pixel: 10-40 ms Analysis time 5-10 min
  • Automated local strain analysis via AppFive proprietary algorithm
  • Acquisition from individual positions, line profiles, areas
  • Spatial resolution < 2 nm attainable (FEG TEM)
  • Monitor engineered strain distributions in modern semiconductor devices
  • Expected sensitivity: < 2 x 10-4
  • Intuitive workflow

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible.

Beam Precession in EELS & EDX spectroscopy enhance the signal reducing channelling effects. Automated quantification with statistical error analysis is available. Multiple scattering derived from an automatically measured relative thickness.

FEATURES

  • Highly-automated EELS elemental analysis
  • Minimal user input required
  • Specify elements to quantify
  • Chemical shift of each elemental edge
  • Automated quantification with statistical error analysis
  • Multiple scattering derived from an automatically measured relative thickness
  • Elemental core-loss edges from several possible sources:
  • Theoretical : Hartree-Slater (Rez)
  • Experimental edges from reference materials
  • Intuitive workflow

Beam Precession in EELS & EDX spectroscopy enhance the signal reducing channelling effects. Automated quantification with statistical error analysis is available. Multiple scattering derived from an automatically measured relative thickness.

FEATURES

  • Highly-automated EELS elemental analysis
  • Minimal user input required
  • Specify elements to quantify
  • Chemical shift of each elemental edge
  • Automated quantification with statistical error analysis
  • Multiple scattering derived from an automatically measured relative thickness
  • Elemental core-loss edges from several possible sources:
  • Theoretical : Hartree-Slater (Rez)
  • Experimental edges from reference materials
  • Intuitive workflow

Topspin is a digital STEM, Beam Precession and Analytical Experiment Framework offering a suite of beam precession-enabled imaging and advanced analytical experiments.

Turn-key Solution (Hardware & Experiments) that upgrades your STEM to enable new advanced experiments enabled by Precession Electron Diffraction Scanned Acquisition in combination with DigiSTAR.

A range of side entry camera mounts which optimise the signal quality from a stingray camera. This mechanism features faster decay phosphor, optimised optical coupling, special lens and reduced background light contamination. Additionally, the camera is mounted perpendicular to the image plane resulting in distortion free diffraction images. These are available for side entry ports (35mm) on most columns.

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