Technical Note: A New Approach to Low-Level Measurements of Nanostructures

How to Overcome the Challenges of Characterising Ultra-small Structures

The study of new semiconducting materials, high temperature superconductors, photovoltaic devices, and organic electronic materials typically requires low-level sourcing and measurement because the materials are often nanostructures. The trouble is, the types of low-level measurements required to fully characterise such small structures are often contaminated with significant levels of power line, thermal, and other types of ambient noise signals.

This technical note, “A New Approach to Improving Confidence in Low-Level Measurements of Nanostructures,” examines existing methods and how well they address the challenge of noise in measurement. It also provides an in-depth look at a solution: a synchronised and modular AC + DC sourcing and measurement system that utilises optimum sensitivity, noise rejection, and uninterrupted data acquisition to more confidently characterise such structure.

Electronic device structures are getting increasingly smaller.  And because they’re smaller, they can only tolerate extremely low stimulus currents and voltages, which reduce measurable signals close to the noise floor of typical instrumentation and experimental setups.  This technical note explores a new approach to making such low-level signal measurements, one that utilises optimum sensitivity, noise rejection, and uninterrupted acquisition of data as a means to more confidently characterise such materials.

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