GaAlAs Diodes
The TG-120 gallium-aluminium-arsenide (GaAlAs) diode cryogenic temperature sensors are particularly well suited for low to moderate magnetic field applications at low temperatures.
The GaAlAs sensing element exhibits high sensitivity (dV/dT) at low temperatures. Voltage-temperature characteristics are monotonic over the sensor’s useful range from 1.4 K to 500 K (see data plots below).
Gallium-aluminium-arsenide diodes are direct band-gap, single junction devices that produce small output variances in the presence of magnetic fields. Consequently, their low magnetic field dependence makes them ideally suited for applications in moderate magnetic fields up to 5 T.
Packaging options:
TG-120-SD, CU/CU-HT, CO
The Lake Shore SD Package — The most rugged, versatile package in the industry
The SD package, with direct sensor-to-sapphire base mounting, hermetic seal, and welded platinum leads, provides the industry’s most rugged, versatile sensors with the best sample to chip connection. Designed so heat coming down the leads bypasses the chip, it can survive several thousand hours at 500 K (depending on model) and is compatible with most ultra high vacuum applications. It can be indium soldered to samples.
TG-120-SD Features
- Monotonic temperature response from 1.4 K to 500 K
- Excellent sensitivity (dV/dT) at temperatures below 50 K
- Relatively low magnetic field-induced errors
- Rugged, reliable Lake Shore SD package designed to withstand repeated thermal cycling and minimise sensor self-heating
- Variety of packaging options
Graphs & Infographics
