Electronic Transport Characterisation of HEMT Structures

High-electron-mobility transistors (HEMTs) are not a new invention, but they are now coming to the forefront of the semiconductor industry because of their use in communication applications. Improved characterisation techniques are needed to continue the development of HEMTs and to improve production processes. This article discusses electronic transport characterisation of HEMT structures employing variable magnetic field, variable temperature Hall measurements and a mobility spectrum analysis software package.

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