Categories:
Model 8425 DC Hall System with Cryogenic Probe Station
Non-destructive Hall measurement of wafer-scale materials in a tightly controlled cryogenic environment
Advancing materials research
Featuring the latest in Lake Shore Hall measurement capabilities, the Model 8425 is ideal for a number of applied physics, electrical engineering, materials research, and product R&D applications. Measure electronic and magneto-transport properties of novel materials, including:
- III-V semiconductors—InP, InSb, InAs, GaN, GaP, GaSb, AIN-based devices, high-electron mobility transistors (HEMTs), heterojunction bipolar transistors
- II-VI semiconductors—CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
- Elemental semiconductors—Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe-based devices (HBTs and FETs)
- High-temperature superconductors
Direct and derived measurements as a function of field and temperature
- Hall voltage
- IV curve measurements
- Resistance
- Magnetoresistance
- Magnetotransport
- Hall coefficient
- Hall mobility
- Anomalous Hall effect (AHE)
- Carrier type/concentration/density
Features of the Model 8425
- A complete Hall effect measurement system using device probing under vacuum in a probe station
- Supports a range of DC field Hall measurements—measure mobility on wafer-scale materials and structures as a function of temperature and field
- DC fields to 2 T and resistances from 0.5 mΩ to 100 GΩ
- Vary temperatures from 10 K to 400 K using closed-cycle refrigerator—no cryogen required
- Includes intuitive 8400 Series software for easy system operation, data acquisition, and analysis
- Supports exporting of data for multi-carrier analysis
- 3-year standard warranty
Downloads
Supplier Info
Model 8425 Specifications
Specifications
